dm c 3016 l sd advance information advanced informatio n complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d t a = + 25 c q 2 3 0 v 16 m @ v gs = - 10v - 6. 2 a 38m @ v gs = - 4.5 v - 5. 2 a description thi s new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc- dc converters ? power management f u nctions ? features and benefits ? low input capacitance ? low on - resistance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high r eliability mechanical data ? case: so - 8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish ? matte tin a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0. 074 grams ( approximate ) ordering information (note 4 ) part number case packaging dm c 3016 l sd - 13 so - 8 2 , 5 00/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of halogen - and antimony - free, "green" and l ead - free. 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diod es.com/products/packages.html. marking information e3 = manufacturer?s marking c3016ld = product typ e marking code yyww = date code marking yy or yy = year (ex: 14 = 20 14) ww = week (01 - 53) y y = date code marking for sat (shanghai assembly/ test s ite ) y y = date code marking for cat (chengdu assembly/ test s ite ) chengdu a/t site shanghai a/t site c 3016 ld c 3016 ld t op view s2 d1 s1 d2 g1 g2 d2 d1 t op view pin configuration n - channel mosfet p - channel mosfet d 2 s 2 g 2 d 1 s 1 g 1 so - 8 pin1 dm c 3016 l sd document number : ds 36935 rev. 2 - 2 1 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value q 2 value q 1 units drain - source voltage v dss 3 0 - 3 0 v gate - source voltage v gss 20 20 v conti nuous drain current (note 6 ) v gs = 10v steady state t a = +25c t a = + 70 c i d 8. 2 6. 5 - 6. 2 - 5. 0 a t<10s t a = +25c t a = + 70 c i d 10.5 8 . 4 - 8. 0 - 6. 4 a maximum body diode forward current (note 6 ) i s 2. 5 - 2.5 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 8 0 - 40 a avalanche current (note 7 ) l = 0. 1mh i a s 22 22 a avalanche energy (note 7 ) l = 0. 1mh e a s 25 25 mj thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 1. 2 w t a = + 70 c 0. 8 thermal resistance, junction to ambient (note 5) s teady state r ja 102 c/w t<10s 62 total power dissipation (note 6 ) t a = +25c p d 1. 6 w t a = + 70 c 1. 0 thermal resistance, junction to ambient (note 6 ) s teady state r ja 7 8 c/w t<10s 4 7 thermal resistance, junction to case (note 6 ) r electrical characteristics n - channel q 2 ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown v oltage bv dss 30 ? ? v v gs = 0v, i d = 250a ? 1 ? 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1. 0 ? 3.0 v v ds = v gs , i d = 250 a 12 16 m v gs = 10 v, i d = 1 2 a ? 1 5 20 v gs = 4 .5v, i d = 10 a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss ? 1415 ? pf v ds = 15 v, v gs = 0v , f = 1.0mh z output capacitance c oss ? 119 ? reverse transfer capacitance c rss ? 82 ? gate r esistance r g ? 2.6 3.2 11.3 ? nc v ds = 1 5 v, i d = 12a total gate charge ( v gs = 10 v ) q g ? 25.1 ? gate - source charge q gs ? 3.5 ? gate - drain charge q gd ? 3.6 ? turn - on delay time t d(on) ? 4.8 ? ns v dd = 15 v, v gs = 10 v, r l = 1.25 , r g = 3 , turn - on rise time t r ? 16.5 ? turn - off delay time t d(off) ? 26.1 ? turn - off fa ll time t f ? 5.6 ? notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. uis in production with l = 0.1 mh, star ting t a = +25c. 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. dm c 3016 l sd document number : ds 36935 rev. 2 - 2 2 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n electrical characteristics p - channel q 1 ( @t a = +25c, unless otherwise specified.) characteristic symbol min ty p max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 3 0 ? ? ? ? ? ? o n characteristics (note 8 ) gate threshold voltage v gs(th) - 1. 0 ? ? v gs = - 10 v, i d = - 7 a ? ? dynamic characteristics (note 9 ) input capacitance c iss ? ? ? 147 ? reverse transfer capacitance c rss ? 110 ? gate resistance r g ? 1 5 v ds = 0 v, v gs = 0v , f = 1.0 mhz total gate charge ( v gs = - 4.5 v ) q g ? ? v ds = - 15 v, i d = - 7 a total gate charge ( v gs = - 10 v ) q g ? ? ? ? ? ? ? ? v ds = - 15 v, i d = - 7 a v gs = - 1 0 v, r g = 6 turn - on rise time t r ? ? ? ? ? ? www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 5a gs d v =v i = 10a gs d 10 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 t = 25c a dm c 3016 l sd document number : ds 36935 rev. 2 - 2 4 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( a ) d s s 0.1 1 10 100 1000 10000 0 10 20 30 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v = 15v i= a ds d 12 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.01 0.1 1 10 100 0.1 1 10 100 t = 150c t = 25c v = 10v single pulse j(max) a gs dut on 1 * mrp board r limited ds(on) v , drain -source voltage (v) figure 13 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 0 1 2 3 4 5 v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -4.0v gs v = -10v gs v = -3.5v gs v = -5.0v gs v , gate-source voltage (v) gs figure 14 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 0 1 2 3 4 5 t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a v = -5.0v ds dm c 3016 l sd document number : ds 36935 rev. 2 - 2 5 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n i , drain source current (a) figure 15 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? ? t = 25 c a t = 85 c a t = 125 c a t = 150 c a figure 17 on-resistance variation with temperature r , d r a i n -s o u r c e o n -r esi st an c e (n o r m a l i z ed ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -5v i = -5a gs d v = -10v i = -10a gs d t , junction temperature ( c) j figure 18 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n v , drain-source voltage (v) figure 21 typical drain-source leakage current vs. voltage ds i , l e a k a g e c u r r e n t (n a ) d s s 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t = 150c a t = 125c a t = 85c a t = 25c a c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 22 typical junction capacitance ds 10 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 23 gate-charge characteristics g v , g a t e-so u r c e vo l t a g e (v) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v = -15v i = -7a ds d v , drain-source voltage (v) figure 24 soa, safe operation area ds i , d r a i n c u r r en t (a) d t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 t1, pulse duration times (sec) figure 25 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 102c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.9 dm c 3016 l sd document number : ds 36935 rev. 2 - 2 7 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n p ackage outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest versi on. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.5 0 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y dm c 3016 l sd document number : ds 36935 rev. 2 - 2 8 of 9 www.diodes.com august 2014 ? d iodes incorporated
dm c 3016 l sd advance information advanced informatio n important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limite d to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements , corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unautho rized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death asso ciated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united st ates, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. l ife support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling ca n be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all l egal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014 , diodes incorporated www.diodes.com dm c 3016 l sd document number : ds 36935 rev. 2 - 2 9 of 9 www.diodes.com august 2014 ? d iodes incorporated
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